Physical Properties Of Nitrogen Doped Amorphous Carbon Films From Ethanol Precursor For Solar Cell Applications
نویسندگان
چکیده
The nitrogen doped amorphous carbon (a-C:N) thin films were synthesized for the first time by mixing of nitrogen gas, argon and ethanol precursor via a bias assisted pyrolysis-CVD in the range of 250 o C to 550 o C with fixed negative bias of -50V in 1h deposition. The a-C:N thin films were characterized by current-voltage measurement, UV/VIS spectrophotometer, surface profiler, and atomic force microscopy. The resistivity of a-C:N thin films in the range 250 o C-550 o C was 4.97x10 Ω.cm, 2.66x10 Ω.cm 1.974x10Ω.cm, 3.63x10Ω.cm, and 4.44x10Ω.cm, and 1.73x10Ω.cm, respectively. It was found that a-C:N thin films have responded with photon by created electron hole pair where the highest photo response of a-C:N film was found at 350 o C. The deposition temperatures with the help of constant dc voltage influenced the physical properties of a-C thin films.
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Electrical Properties Of Nitrogen Doped Amorphous Carbon Films Fromethanol Precursor
The nitrogen doped amorphous carbon (a-C:N) thin films were synthesized for the first time by using mixing of nitrogen gas, argon and ethanol precursor by bias assisted pyrolysis-CVD in the range of 250 o C to 550 o C with fixed negative bias of -50V in 1h deposition. The a-C:Nthin films were characterized by current-voltage measurement, UV/VIS spectrophotometer, surface profiler, and atomic fo...
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